Realistic model of correlated disorder and Anderson localization

dc.creatorFlambaum, V. V.
dc.date1999-01-04
dc.date.accessioned2026-07-07T03:12:33Z
dc.date.available2026-07-07T03:12:33Z
dc.descriptionA conducting 1D line or 2D plane inside (or on the surface of) an insulator is considered.Impurities displace the charges inside the insulator. This results in a long-range fluctuating electric field acting on the conducting line (plane). This field can be modeled by that of randomly distributed electric dipoles. This model provides a random correlated potential with <U(r)U(r+k)> decaying as 1/k . In the 1D case such correlations give essential corrections to the localization length but do not destroy Anderson localization.
dc.identifierhttps://arxiv.org/abs/cond-mat/9901020
dc.identifierhttp://arxiv.org/abs/cond-mat/9901020
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28949
dc.subjectDisordered Systems and Neural Networks
dc.subjectMesoscale and Nanoscale Physics
dc.titleRealistic model of correlated disorder and Anderson localization
dc.typetext

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