Gate tunability of stray-field-induced electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating

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dc.creatorMeier, L.
dc.creatorSalis, G.
dc.creatorEllenberger, C.
dc.creatorGini, E.
dc.creatorEnsslin, K.
dc.date2006-12-21
dc.date.accessioned2026-07-07T07:36:32Z
dc.date.available2026-07-07T07:36:32Z
dc.descriptionTime-resolved Faraday rotation is used to measure the coherent electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating. We show that the electron spin precession frequency can be modified by applying a gate voltage of opposite polarity to neighboring bars. A tunability of the precession frequency of 0.5 GHz/V has been observed. Modulating the gate potential with a gigahertz frequency allows the electron spin precession to be controlled on a nanosecond timescale.
dc.identifierhttps://arxiv.org/abs/cond-mat/0612558
dc.identifierhttp://arxiv.org/abs/cond-mat/0612558
dc.identifierPhys. Rev. B 74, 245318 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.245318
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/120457
dc.subjectMesoscale and Nanoscale Physics
dc.titleGate tunability of stray-field-induced electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating
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