A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs

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dc.creatorBauer, J.
dc.creatorSchuh, D.
dc.creatorUccelli, E.
dc.creatorSchulz, R.
dc.creatorKress, A.
dc.creatorHofbauer, F.
dc.creatorFinley, J. J.
dc.creatorAbstreiter, G.
dc.date2004-03-12
dc.date.accessioned2026-07-07T02:56:55Z
dc.date.available2026-07-07T02:56:55Z
dc.descriptionWe report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.
dc.identifierhttps://arxiv.org/abs/cond-mat/0403328
dc.identifierhttp://arxiv.org/abs/cond-mat/0403328
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23520
dc.subjectMesoscale and Nanoscale Physics
dc.titleA new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs
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