All-electronic coherent population trapping in quantum dots

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dc.creatorMichaelis, B.
dc.creatorEmary, C.
dc.creatorBeenakker, C. W. J.
dc.date2005-05-31
dc.date2006-01-10
dc.date.accessioned2026-07-07T06:37:54Z
dc.date.available2026-07-07T06:37:54Z
dc.descriptionWe present a fully electronic analogue of coherent population trapping in quantum optics, based on destructive interference of single-electron tunneling between three quantum dots. A large bias voltage plays the role of the laser illumination. The trapped state is a coherent superposition of the electronic charge in two of these quantum dots, so it is destabilized as a result of decoherence by coupling to external charges. The resulting current I through the device depends on the ratio of the decoherence rate Gamma_phi and the tunneling rates. For Gamma_phi --> 0 one has simply I=e Gamma_phi. With increasing Gamma_phi the current peaks at the inverse trapping time. The direct relation between I and Gamma_phi can serve as a means of measuring the coherence time of a charge qubit in a transport experiment.
dc.descriptionversion 2: added results for unequal tunnel/decoherence rates
dc.identifierhttps://arxiv.org/abs/cond-mat/0506005
dc.identifierhttp://arxiv.org/abs/cond-mat/0506005
dc.identifierEurophys. Lett. 73, 677 (2006).
dc.identifierdoi:10.1209/epl/i2005-10458-6
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/100552
dc.subjectMesoscale and Nanoscale Physics
dc.titleAll-electronic coherent population trapping in quantum dots
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