Sharp increase of the effective mass near the critical density in a metallic 2D electron system

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dc.creatorShashkin, A. A.
dc.creatorKravchenko, S. V.
dc.creatorDolgopolov, V. T.
dc.creatorKlapwijk, T. M.
dc.date2001-11-25
dc.date2001-12-01
dc.date.accessioned2026-07-07T02:43:40Z
dc.date.available2026-07-07T02:43:40Z
dc.descriptionWe find that at intermediate temperatures, the metallic temperature dependence of the conductivity σ(T) of 2D electrons in silicon is described well by a recent interaction-based theory of Zala et al. (Phys. Rev. B 64, 214204 (2001)). The tendency of the slope dσ/dT to diverge near the critical electron density is in agreement with the previously suggested ferromagnetic instability in this electron system. Unexpectedly, it is found to originate from the sharp enhancement of the effective mass, while the effective Lande g factor remains nearly constant and close to its value in bulk silicon.
dc.identifierhttps://arxiv.org/abs/cond-mat/0111478
dc.identifierhttp://arxiv.org/abs/cond-mat/0111478
dc.identifierPhys. Rev. B 66, 073303 (2002)
dc.identifierdoi:10.1103/PhysRevB.66.073303
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18582
dc.subjectStrongly Correlated Electrons
dc.titleSharp increase of the effective mass near the critical density in a metallic 2D electron system
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