High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes

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dc.creatorPizzini, Stefania
dc.creatorUhlir, Vojtech
dc.creatorVogel, Jan
dc.creatorRougemaille, Nicolas
dc.creatorLaribi, Sana
dc.creatorCros, Vincent
dc.creatorJimenez, Erika
dc.creatorCamarero, Julio
dc.creatorTieg, Carsten
dc.creatorBonet, Edgar
dc.creatorBonfim, Marlio
dc.creatorMattana, Richard
dc.creatorDeranlot, Cyrile
dc.creatorPetroff, Frédric
dc.creatorUlysse, Christian
dc.creatorFaini, Giancarlo
dc.creatorFert, Albert
dc.date2008-10-20
dc.date2009-01-30
dc.date.accessioned2026-07-07T12:35:26Z
dc.date.available2026-07-07T12:35:26Z
dc.descriptionCurrent-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.
dc.descriptionPublished version, Applied Physics Express 2, 023003 (2009) http://dx.doi.org/10.1143/APEX.2.023003
dc.identifierhttps://arxiv.org/abs/0810.3576
dc.identifierhttp://arxiv.org/abs/0810.3576
dc.identifierApplied Physics Express 2 (2009) 023003
dc.identifierdoi:10.1143/APEX.2.023003
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/217763
dc.subjectMaterials Science
dc.titleHigh domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes
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