Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime

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dc.creatorPershin, Yu. V.
dc.creatorDi Ventra, M.
dc.date2007-07-30
dc.date.accessioned2026-07-07T09:27:45Z
dc.date.available2026-07-07T09:27:45Z
dc.descriptionIt was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we consider current-voltage characteristics of such junctions. By taking into account the contact resistance, we demonstrate a current stabilization effect: by increasing the applied voltage the current density through the junction saturates at a specific value. The transient behavior of the current density is also investigated.
dc.identifierhttps://arxiv.org/abs/0707.4475
dc.identifierhttp://arxiv.org/abs/0707.4475
dc.identifierPhys. Rev. B 77, 073301 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.073301
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/157215
dc.subjectMesoscale and Nanoscale Physics
dc.titleCurrent-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime
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