Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

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dc.creatorSun, Jie
dc.creatorJin, Peng
dc.creatorZhao, Chang
dc.creatorYu, Like
dc.creatorYe, Xiaoling
dc.creatorXu, Bo
dc.creatorChen, Yonghai
dc.creatorWang, Zhanguo
dc.date2007-12-06
dc.date.accessioned2026-07-07T08:47:42Z
dc.date.available2026-07-07T08:47:42Z
dc.descriptionMolecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions is observed at relatively high temperature of 77K. The ground states of quantum dots are found to be at ~0.19eV below the conduction band of GaAs matrix. The theoretical computations are in conformity with experimental data.
dc.identifierhttps://arxiv.org/abs/0712.0980
dc.identifierhttp://arxiv.org/abs/0712.0980
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/143691
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
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