Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering

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dc.creatorDas, A.
dc.creatorPisana, S.
dc.creatorPiscanec, S.
dc.creatorChakraborty, B.
dc.creatorSaha, S. K.
dc.creatorWaghmare, U. V.
dc.creatorYiang, R.
dc.creatorKrishnamurhthy, H. R.
dc.creatorGeim, A. K.
dc.creatorFerrari, A. C.
dc.creatorSood, A. K.
dc.date2007-09-08
dc.date.accessioned2026-07-07T09:56:46Z
dc.date.available2026-07-07T09:56:46Z
dc.descriptionWe demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, while the 2D peak shows a different response to holes and electrons. Its position increases for hole doping, while it softens for high electron doping. The variation of G peak position is a signature of the non-adiabatic Kohn anomaly at $Γ$. On the other hand, for visible excitation, the variation of the 2D peak position is ruled by charge transfer. The intensity ratio of G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor charges.
dc.description7 pages, 8 figures
dc.identifierhttps://arxiv.org/abs/0709.1174
dc.identifierhttp://arxiv.org/abs/0709.1174
dc.identifierNature Nanotechnology 3, 210 - 215 (01 Apr 2008)
dc.identifierdoi:10.1038/nnano.2008.67
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/167094
dc.subjectMaterials Science
dc.titleElectrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
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