Rotational stacking and its electronic effects on graphene films grown on 4H-SiC$(000\bar{1})$

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dc.creatorHass, J.
dc.creatorVarchon, F.
dc.creatorMillan-Otoya, J. E.
dc.creatorSprinkle, M.
dc.creatorde Heer, W. A.
dc.creatorBerger, C.
dc.creatorFirst, P. N.
dc.creatorMagaud, L.
dc.creatorConrad, E. H.
dc.date2007-06-14
dc.date.accessioned2026-07-07T08:10:09Z
dc.date.available2026-07-07T08:10:09Z
dc.descriptionWe examine the stacking order of multilayer graphene grown on the SiC$(000\bar{1})$ surface using low-energy electron diffraction and surface X-ray diffraction. We show that the films contain a high density of rotational stacking faults caused by three types of rotated graphene: sheets rotated $30^\circ$ and $\pm 2.20^\circ$ relative to the SiC substrate. These angles are unique because they correspond to commensurate phases of layered graphene, both with itself and with the SiC substrate. {\it Ab intio} calculations show that these rotational phases electronically decouple adjacent graphene layers. The band structure from graphene at fault boundaries displays linear energy dispersion at the $K$-point (Dirac cones), nearly identical to that of a single graphene sheet.
dc.description5 pages 4 figures
dc.identifierhttps://arxiv.org/abs/0706.2134
dc.identifierhttp://arxiv.org/abs/0706.2134
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/131749
dc.subjectMaterials Science
dc.titleRotational stacking and its electronic effects on graphene films grown on 4H-SiC$(000\bar{1})$
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