Magneto-resistivity model and ionization energy approximation for ferromagnets

dc.creatorArulsamy, Andrew Das
dc.creatorCui, Xiangyuan
dc.creatorStampfl, Catherine
dc.creatorRatnavelu, Kurunathan
dc.date2007-01-22
dc.date2008-12-19
dc.date.accessioned2026-07-07T13:05:44Z
dc.date.available2026-07-07T13:05:44Z
dc.descriptionThe evolution of resistivity versus temperature ($ρ(T)$) curve for different doping elements, and in the presence of various defects and clustering are explained for both diluted magnetic semiconductors (DMS) and manganites. Here, we provide unambiguous evidence that the concept of ionization energy ($E_I$), which is explicitly associated with the atomic energy levels, can be related quantitatively to transport measurements. The proposed ionization energy model is used to understand how the valence states of ions affect the evolution of $ρ(T)$ curves for different doping elements. We also explain how the $ρ(T)$ curves evolve in the presence of, and in the absence of defects and clustering. The model also complements the results obtained from first-principles calculations.
dc.descriptionAccepted. See the additional notes in the Appendix
dc.identifierhttps://arxiv.org/abs/cond-mat/0701514
dc.identifierhttp://arxiv.org/abs/cond-mat/0701514
dc.identifierPhys. Status Solidi B 246 (2009) 1060
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/227584
dc.subjectStatistical Mechanics
dc.subjectStrongly Correlated Electrons
dc.titleMagneto-resistivity model and ionization energy approximation for ferromagnets
dc.typetext

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