Model of circular polarization dependence on Mn delta-layer position in LED heterostructures with InGaAs/GaAs quantum well

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dc.creatorKhomitsky, D. V.
dc.date2009-02-20
dc.date.accessioned2026-07-07T12:45:00Z
dc.date.available2026-07-07T12:45:00Z
dc.descriptionA simple model of circular polarization dependence on Mn delta-layer position in LED heterostructures with InGaAs/GaAs quantum well is proposed, being able to explain quite accurately recent fascinating experimental results [S.V. Zaitsev, et al., Physica E (2009), doi:10.1016/j.physe.2008.11.003]. The model emphasizes the role of position-dependent exchange interaction between injected holes and Mn spins which significantly affects the hole level splitting in a magnetic field, leading to strong variations of polarization dependence. The role of effective temperature corresponding to the injected hole energy and the broadening caused by the geometrical structure imperfections is also discussed.
dc.description10 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/0902.3552
dc.identifierhttp://arxiv.org/abs/0902.3552
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/220963
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleModel of circular polarization dependence on Mn delta-layer position in LED heterostructures with InGaAs/GaAs quantum well
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