Domain walls in (Ga,Mn)As diluted magnetic semiconductor

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dc.creatorSugawara, Akira
dc.creatorKasai, H.
dc.creatorTonomura, A.
dc.creatorBrown, P. D.
dc.creatorCampion, R. P.
dc.creatorEdmonds, K. W.
dc.creatorGallagher, B. L.
dc.creatorZemen, J.
dc.creatorJungwirth, T.
dc.date2008-02-12
dc.date.accessioned2026-07-07T09:20:12Z
dc.date.available2026-07-07T09:20:12Z
dc.descriptionWe report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall magnetization profiles. The experiments are interpreted based on microscopic calculations of the micromagnetic parameters and Landau-Lifshitz-Gilbert simulations. We find that the competition of uniaxial and biaxial magnetocrystalline anisotropies in the film is directly reflected in orientation dependent wall widths, ranging from approximately 40 nm to 120 nm. The domain walls are of the Néel type and evolve from near-$90^{\circ}$ walls at low-temperatures to large angle [1$\bar{1}$0]-oriented walls and small angle [110]-oriented walls at higher temperatures.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0802.1574
dc.identifierhttp://arxiv.org/abs/0802.1574
dc.identifierPhysical Review Letter, 100, 047202 (2008)
dc.identifierdoi:10.1103/PhysRevLett.100.047202
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/154646
dc.subjectMaterials Science
dc.titleDomain walls in (Ga,Mn)As diluted magnetic semiconductor
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