Optical Properties of III-Mn-V Ferromagnetic Semiconductors

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dc.creatorBurch, K. S.
dc.creatorAwschalom, D. D.
dc.creatorBasov, D. N.
dc.date2008-10-20
dc.date.accessioned2026-07-07T10:12:00Z
dc.date.available2026-07-07T10:12:00Z
dc.descriptionWe review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III-V host, which can result in carrier mediated ferromagnetism in these disordered semiconductors. Spectroscopic experiments provide direct access to the strength and nature of the exchange between holes and local moments; the degree of itineracy of the carriers; and the evolution of the states at the Fermi energy with doping. Taken together, diversity of optical methods reveal that Mn is an unconventional dopant, in that the metal to insulator transition is governed by the strength of the hybridization between Mn and its p-nictogen neighbor. The interplay between the optical, electronic and magnetic properties of III-Mn-V magnetic semiconductors is of fundamental interest and may enable future spin-optoelectronic devices.
dc.descriptionTopical Review
dc.identifierhttps://arxiv.org/abs/0810.3669
dc.identifierhttp://arxiv.org/abs/0810.3669
dc.identifierJournal of Magnetism and Magnetic Materials 320 (2008), pp. 3207-3228
dc.identifierdoi:10.1016/j.jmmm.2008.08.060
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/172040
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleOptical Properties of III-Mn-V Ferromagnetic Semiconductors
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