Multi-layer atom chips for versatile atom micro manipulation

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dc.creatorTrinker, Martin
dc.creatorGroth, Sönke
dc.creatorHaslinger, Stefan
dc.creatorManz, Stephanie
dc.creatorBetz, Thomas
dc.creatorBar-Joseph, Israel
dc.creatorSchumm, Thorsten
dc.creatorSchmiedmayer, Jörg
dc.date2008-01-22
dc.date.accessioned2026-07-07T09:45:58Z
dc.date.available2026-07-07T09:45:58Z
dc.descriptionWe employ a combination of optical UV- and electron-beam-lithography to create an atom chip combining sub-micron wire structures with larger conventional wires on a single substrate. The new multi-layer fabrication enables crossed wire configurations, greatly enhancing the flexibility in designing potentials for ultra cold quantum gases and Bose-Einstein condensates. Large current densities of >6 x 10^7 A/cm^2 and high voltages of up to 65 V across 0.3 micron gaps are supported by even the smallest wire structures. We experimentally demonstrate the flexibility of the next generation atom chip by producing Bose-Einstein condensates in magnetic traps created by a combination of wires involving all different fabrication methods and structure sizes.
dc.description4 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0801.3351
dc.identifierhttp://arxiv.org/abs/0801.3351
dc.identifierAppl. Phys. Lett. 92, 254102 (2008)
dc.identifierdoi:10.1063/1.2945893
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/163376
dc.subjectAtomic Physics
dc.subjectInstrumentation and Detectors
dc.titleMulti-layer atom chips for versatile atom micro manipulation
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