Effect of disorder on a graphene p-n junction

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dc.creatorFogler, M. M.
dc.creatorGlazman, L. I.
dc.creatorNovikov, D. S.
dc.creatorShklovskii, B. I.
dc.date2007-10-11
dc.date2008-01-28
dc.date.accessioned2026-07-07T09:21:51Z
dc.date.available2026-07-07T09:21:51Z
dc.descriptionWe propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction resistance is dominated by either diffusive or ballistic contribution. We find the conditions for observing ballistic transport and show that in existing devices they are satisfied only marginally. We also simulate numerically the trajectories of charge carriers and illustrate challenges in realizing more delicate ballistic effects, such as Veselago lensing.
dc.description(v2)Version accepted to Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/0710.2150
dc.identifierhttp://arxiv.org/abs/0710.2150
dc.identifierPhys. Rev. B 77, 075420 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.075420
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155176
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleEffect of disorder on a graphene p-n junction
dc.typetext

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