Current Oscillations and Negative Resistances in Crossed Carbon Nanotubes Suspended Over a Dielectric Trench
| dc.creator | Ahmad, M. Al | |
| dc.creator | Dragoman, D. | |
| dc.creator | Dragoman, M. | |
| dc.creator | Plana, R. | |
| dc.creator | Ting, J. -H. | |
| dc.creator | Huang, F. -Y. | |
| dc.creator | Li, T. -L. | |
| dc.date | 2009-01-04 | |
| dc.date.accessioned | 2026-07-07T12:43:22Z | |
| dc.date.available | 2026-07-07T12:43:22Z | |
| dc.description | An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon substrate that acts as a gate. Alternating positive and negative differential resistance regions are generated as a function of the drain source values and can be slightly shifted by the gate voltage. Moreover, the negative differential resistance is retrieved in a large bandwidth, of up to 100 MHz, when the structure is excited with ac signals. | |
| dc.identifier | https://arxiv.org/abs/0901.0363 | |
| dc.identifier | http://arxiv.org/abs/0901.0363 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/220397 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Materials Science | |
| dc.title | Current Oscillations and Negative Resistances in Crossed Carbon Nanotubes Suspended Over a Dielectric Trench | |
| dc.type | text |