Large Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface

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dc.creatorChen, Y. L.
dc.creatorAnalytis, J. G.
dc.creatorChu, J. H.
dc.creatorLiu, Z. K.
dc.creatorMo, S. K.
dc.creatorQi, X. L.
dc.creatorZhang, H. J.
dc.creatorLu, D. H.
dc.creatorDai, X.
dc.creatorFang, Z.
dc.creatorZhang, S. C.
dc.creatorFisher, I. R.
dc.creatorHussain, Z.
dc.creatorShen, Z. X.
dc.date2009-04-12
dc.date.accessioned2026-07-07T13:03:18Z
dc.date.available2026-07-07T13:03:18Z
dc.descriptionWe investigate the surface state of Bi$_2$Te$_3$ using angle resolved photoemission spectroscopy (ARPES) and transport measurements. By scanning over the entire Brillouin zone (BZ), we demonstrate that the surface state consists of a single non-degenerate Dirac cone centered at the $Γ$ point. Furthermore, with appropriate hole (Sn) doping to counteract intrinsic n-type doping from vacancy and anti-site defects, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states, consistent with a carrier sign change near this doping in transport properties. Our experimental results establish for the first time that Bi$_2$Te$_3$ is a three dimensional topological insulator with a single Dirac cone on the surface, as predicted by a recent theory.
dc.descriptionSubmitted for publication on March 03, 2009
dc.identifierhttps://arxiv.org/abs/0904.1829
dc.identifierhttp://arxiv.org/abs/0904.1829
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/226753
dc.subjectMaterials Science
dc.titleLarge Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface
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