Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon

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dc.creatorZudov, M. A.
dc.creatorYang, C. L.
dc.creatorDu, R. R.
dc.creatorShen, T. -C.
dc.creatorJi, J. -Y.
dc.creatorKline, J. S.
dc.creatorTucker, J. R.
dc.date2003-05-20
dc.date.accessioned2026-07-07T02:51:26Z
dc.date.available2026-07-07T02:51:26Z
dc.descriptionAn ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first systematic characterization of such novel system by means of standard magnetotransport. The main findings include logarithmic temperature dependence of zero-field conductivity and logarithmic negative magnetoresistance. We analyzed the results in terms of scaling theory of localization in two dimensions.
dc.identifierhttps://arxiv.org/abs/cond-mat/0305482
dc.identifierhttp://arxiv.org/abs/cond-mat/0305482
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21457
dc.subjectCondensed Matter
dc.titleWeak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon
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