The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
| dc.creator | Lai, K. | |
| dc.creator | Pan, W. | |
| dc.creator | Tsui, D. C. | |
| dc.creator | Lyon, S. | |
| dc.creator | Muhlberger, M. | |
| dc.creator | Schaffler, F. | |
| dc.date | 2004-05-19 | |
| dc.date.accessioned | 2026-07-07T02:58:15Z | |
| dc.date.available | 2026-07-07T02:58:15Z | |
| dc.description | Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si_0.75Ge_0.25/Si/Si_0.75Ge_0.25 heterostructure, at temperatures down to 30mK and in magnetic fields up to 45T. We observe around ν=1/2 the two-flux composite fermion (CF) series of the fractional quantum Hall effect (FQHE) at ν=2/3, 3/5, 4/7, and at ν=4/9, 2/5, 1/3. Among these FQHE states, the ν=1/3, 4/7 and 4/9 states are seen for the first time in the Si/SiGe system. Interestingly, of the CF series, the 3/5 state is weaker than the nearby 4/7 state and the 3/7 state is conspicuously missing, resembling the observation in the integer quantum Hall effect regime that the ν=3 is weaker than the nearby ν=4 state. Our data indicate that the two-fold degeneracy of the CFs is lifted and an estimated valley splitting of ~1K. | |
| dc.description | REVTEX4. 4 pages with 3 postscript figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0405455 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0405455 | |
| dc.identifier | Phys. Rev. Lett., 93, 156805 (2004) | |
| dc.identifier | doi:10.1103/PhysRevLett.93.156805 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/24004 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si | |
| dc.type | text |