Energy Scavenging in Silicon Raman Amplifiers

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dc.creatorFathpour, S.
dc.creatorTsia, K. K.
dc.creatorJalali, B.
dc.date2006-05-17
dc.date2006-05-23
dc.date.accessioned2026-07-07T07:15:03Z
dc.date.available2026-07-07T07:15:03Z
dc.descriptionContinuous-wave Raman amplification in silicon waveguides with negative electrical power dissipation is reported. It is shown that a p-n junction can simultaneously achieve carrier sweep-out leading to net continuous-wave gain, and electrical power generation. The approach is also applicable to silicon Raman lasers and other third-order nonlinear optical devices.
dc.description13 pages
dc.identifierhttps://arxiv.org/abs/physics/0605143
dc.identifierhttp://arxiv.org/abs/physics/0605143
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/113124
dc.subjectOptics
dc.titleEnergy Scavenging in Silicon Raman Amplifiers
dc.typetext

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