Unbalanced Renormalization of Tunneling in MOSFET-type Structures in Strong High-Frequency Electric Fields

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dc.creatorSolenov, Dmitry
dc.date2007-08-12
dc.date.accessioned2026-07-07T08:29:24Z
dc.date.available2026-07-07T08:29:24Z
dc.descriptionTwo-dimensional electron gas coupled to adjacent impurity sites in high-frequency out-of-plane ac control electric field is investigated. Modification of tunneling rates as a function of the field amplitude is calculated. Nonlinear dependence on the ac field strength is reported for the conductivity of two-dimensional electron gas. It develops a periodic peak structure.
dc.description9 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0708.1623
dc.identifierhttp://arxiv.org/abs/0708.1623
dc.identifierPhys. Rev. B 76, 115309 (2007)
dc.identifierdoi:10.1103/PhysRevB.76.115309
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/137958
dc.subjectMesoscale and Nanoscale Physics
dc.subjectQuantum Physics
dc.titleUnbalanced Renormalization of Tunneling in MOSFET-type Structures in Strong High-Frequency Electric Fields
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