Tunneling current induced phonon generation in nanostructures

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dc.creatorArseyev, P. I.
dc.creatorMaslova, N. S.
dc.date2006-07-12
dc.date.accessioned2026-07-07T07:15:58Z
dc.date.available2026-07-07T07:15:58Z
dc.descriptionWe analyze generation of phonons in tunneling structures with two electron states coupled by electron-phonon interaction. The conditions of strong vibration excitations are determined and dependence of non-equilibrium phonon occupation numbers on the applied bias is found. For high vibration excitation levels self consistent theory for the tunneling transport is presented.
dc.description11 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0607304
dc.identifierhttp://arxiv.org/abs/cond-mat/0607304
dc.identifierPisma v ZhETF, vol. 84, issue 2, page 99-104 (2006)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/113416
dc.subjectMesoscale and Nanoscale Physics
dc.titleTunneling current induced phonon generation in nanostructures
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