Free and Trapped Injected Carriers in C60 Crystals
| dc.creator | Butko, V. Y. | |
| dc.creator | Ramirez, A. P. | |
| dc.creator | Kloc, C. | |
| dc.date | 2002-10-01 | |
| dc.date.accessioned | 2026-07-07T02:47:32Z | |
| dc.date.available | 2026-07-07T02:47:32Z | |
| dc.description | We report on the conductance from two-contact carrier injection in C60 single crystals. In the nonlinear regime, the current and voltage obey a power law, I \~ V^m, where m can be as high as 10 at room temperature. This nonlinear behavior - the resistance decreases by 6 orders of magnitude without saturation - is among the highest reported for organic systems, and can be explained by injection of free carriers into the trap-filling region. We find that H2 annealing suppresses shallow traps and enhances nonlinearity. Two limiting types of temperature dependence of the nonlinear resistance are observed - decreasing and increasing resistance at the orientational ordering temperature. A simple model incorporating deep traps is presented to understand this behavior and the impact of this model on possible field-effect transistor action is discussed. | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0210029 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0210029 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/20046 | |
| dc.subject | Materials Science | |
| dc.title | Free and Trapped Injected Carriers in C60 Crystals | |
| dc.type | text |