Pulsed Laser Deposition of LaAlO3-Ba0.5Sr0.5TiO3 Thin Films for Tunable Device Applications

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dc.creatorKong, L. B.
dc.creatorYan, L.
dc.creatorChong, K. B.
dc.creatorTan, C. Y.
dc.creatorChen, L. F.
dc.creatorOng, C. K.
dc.date2003-05-08
dc.date.accessioned2026-07-07T02:51:14Z
dc.date.available2026-07-07T02:51:14Z
dc.descriptionLaAlO3-Ba0.5Sr0.5TiO3 (LAO-BST) thin films, with different LAO contents, were deposited on Pt/Ti/SiO2/Si and (100) LaAlO3 substrate, via a pulsed laser deposition (PLD). Phase composition and microstructure of the LAO-BST thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The LAO-BST thin films were solid solution of LAO nd BST, with lattice constant decreasing with increasing LAO content. The composition of (LAO)x(BST)1-x, estimated from the lattice constant of the thin films derived from the targets of 1/6, 2/6 and 3/6 LAO, was 0.143, 0.278, 0.476, respectively. The grain size of the thin films decreased as a result of the incorporation of LAO into BST. Dielectric properties of the LAO-BST thin films on Pt/Ti/SiO2/Si were measured at low frequency (100 kHz), while those on LaAlO3 substrate were characterized at high frequency (~7.9 GHz). The dielectric constants of the film derived from pure BST target and those from the targets with 1/6, 2/6 and 3/6 area ratio of LAO, on Pt/Ti/SiO2/Si substrate, were 772, 514, 395 and 282, with a dielectric loss of 0.096, 0.023, 0.024 and 0.025, and a dielectric tunability of 65%, 53%, 43% and 14%, respectively. The dielectric constant of the LAO-BST films on LaAlO3 substrate were 2436, 2148, 2018, 1805, with a maximum dielectric tunability of 11%, 13%, 10% and 8% at a maximum applied voltage of 2.4 kV (~9.2 kV/cm).
dc.description19 pages, 9 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0305156
dc.identifierhttp://arxiv.org/abs/cond-mat/0305156
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21377
dc.subjectMaterials Science
dc.titlePulsed Laser Deposition of LaAlO3-Ba0.5Sr0.5TiO3 Thin Films for Tunable Device Applications
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