Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors

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dc.creatorOszwałdowski, R.
dc.creatorMajewski, J. A.
dc.creatorDietl, T.
dc.date2006-05-09
dc.date.accessioned2026-07-07T07:43:07Z
dc.date.available2026-07-07T07:43:07Z
dc.descriptionIntrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72, 205322 (2005)] is employed. The model combines the disorder-free Landauer-Büttiker formalism with the tight-binding description of the host band structure. The obtained results show how much the spherical 4x4 kp model [Nguyen, Shchelushkin, and Brataas, cond-mat/0601436] overestimates DWR in the adiabatic limit, and reveal the dependence of DWR on the magnetization profile and crystallographic orientation of the wall.
dc.description4 pages, 4 figures, submitted to Phys. Rev. B - Rapid Comm
dc.identifierhttps://arxiv.org/abs/cond-mat/0605230
dc.identifierhttp://arxiv.org/abs/cond-mat/0605230
dc.identifierPhys. Rev. B 74, 153310 (2006) [4 pages]
dc.identifierdoi:10.1103/PhysRevB.74.153310
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/122702
dc.subjectMesoscale and Nanoscale Physics
dc.titleInfluence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors
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