Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy

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dc.creatorKohlstedt, H.
dc.creatorPetraru, A.
dc.creatorDenlinger, M. Meier J.
dc.creatorGuo, J.
dc.creatorWanli, Y.
dc.creatorScholl, A.
dc.creatorFreelon, B.
dc.creatorSchneller, T.
dc.creatorWaser, R.
dc.creatorYu, P.
dc.creatorRamesh, R.
dc.creatorLearmonth, T.
dc.creatorGlans, P. -A.
dc.creatorSmith, K. E.
dc.date2008-10-23
dc.date.accessioned2026-07-07T10:12:42Z
dc.date.available2026-07-07T10:12:42Z
dc.descriptionWe applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: h.h.kohlstedt@fz-juelich.de
dc.identifierhttps://arxiv.org/abs/0810.4272
dc.identifierhttp://arxiv.org/abs/0810.4272
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/172271
dc.subjectMaterials Science
dc.titlePolarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy
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