Entanglement between static and flying qubits in a semiconducting carbon nanotube

Simple item page
dc.creatorGunlycke, D.
dc.creatorJefferson, J. H.
dc.creatorRejec, T.
dc.creatorRamsak, A.
dc.creatorPettifor, D. G.
dc.creatorBriggs, G. A. D.
dc.date2005-11-04
dc.date2006-02-02
dc.date.accessioned2026-07-07T06:45:52Z
dc.date.available2026-07-07T06:45:52Z
dc.descriptionEntanglement can be generated by two electrons in a spin-zero state on a semiconducting single-walled carbon nanotube. The two electrons, one weakly bound in a shallow well in the conduction band, and the other injected into the conduction band, are coupled by the Coulomb interaction. Both transmission and entanglement are dependent on the well characteristics, which can be controlled by a local gate, and on the kinetic energy of the injected electron. Regimes with different degrees of electron correlation exhibit full or partial entanglement. In the latter case, the maximum entanglement can be estimated as a function of width and separation of a pair of singlet-triplet resonances.
dc.description17 pages and 12 figures, accepted to J. Phys. Cond. Mat
dc.identifierhttps://arxiv.org/abs/cond-mat/0511126
dc.identifierhttp://arxiv.org/abs/cond-mat/0511126
dc.identifierJ. Phys.: Condens. Matter 18 (2006) S851-S866
dc.identifierdoi:10.1088/0953-8984/18/21/S11
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/103165
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.subjectQuantum Physics
dc.titleEntanglement between static and flying qubits in a semiconducting carbon nanotube
dc.typetext

Files

Collections

arXiv