Silicon nanostructures embedded in superconductor shells

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dc.creatorBagraev, Nikolay T.
dc.creatorGehlhoff, Wolfgang
dc.creatorKlyachkin, Leonid E.
dc.creatorMalyarenko, Anna M.
dc.creatorRomanov, Vladimir V.
dc.creatorRykov, Serguey A.
dc.date2005-10-27
dc.date2006-01-11
dc.date.accessioned2026-07-07T06:45:34Z
dc.date.available2026-07-07T06:45:34Z
dc.descriptionWe present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron of the n - type Si (100) surface. These Si - based nanostructures represent the p - type ultra-narrow self - assembled silicon quantum wells confined by the delta - barriers heavily with boron. The resistivity, thermo - emf and magnetic susceptibility studies show that the high temperature superconductivity observed seems to result from the single - hole tunnelling into the negative - U boron centres at the silicon quantum well - delta - barier interfaces.
dc.description4 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0510726
dc.identifierhttp://arxiv.org/abs/cond-mat/0510726
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/103079
dc.subjectSuperconductivity
dc.subjectMesoscale and Nanoscale Physics
dc.titleSilicon nanostructures embedded in superconductor shells
dc.typetext

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