Epitaxial influence on the ferromagnetic semiconducotor EuO

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dc.creatorIngle, N. J. C.
dc.creatorElfimov, I. S.
dc.date2007-11-28
dc.date.accessioned2026-07-07T09:25:06Z
dc.date.available2026-07-07T09:25:06Z
dc.descriptionFrom first principles calculations we investigate the electronic structure and the magnetic properties of EuO under hydrostatic and epitaxial forces. There is a complex interdependence of the O 2p and Eu 4f and 5d bands on the magnetism in EuO, and decreasing lattice parameters is an ideal method to increase the Curie temperature, T_c. Compared to hydrostatic pressure, the out-of-plane compensation that is available to epitaxial films influences this increase in T_c, although it is minimized by the small value of poisson's ratio for EuO. We find the semiconducting gap closes at a 6% in-plane lattice compression for epitaxy, at which point a significant conceptual change must occur in the active exchange mechanisms.
dc.identifierhttps://arxiv.org/abs/0711.4586
dc.identifierhttp://arxiv.org/abs/0711.4586
dc.identifierPhysical Review B, 77, 121202R (2008)
dc.identifierdoi:10.1103/PhysRevB.77.121202
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/156295
dc.subjectStrongly Correlated Electrons
dc.subjectMaterials Science
dc.titleEpitaxial influence on the ferromagnetic semiconducotor EuO
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