Interface States in Stressed Semiconductor Heterojunction with Antiferromagnetic Ordering

Simple item page
dc.creatorKantser, V. G.
dc.creatorMalkova, N. M.
dc.date1995-10-27
dc.date.accessioned2026-07-07T06:28:38Z
dc.date.available2026-07-07T06:28:38Z
dc.descriptionThe stressed heterojunctions with antiferromagnetic ordering in which the constituents have oppposite band edge symmetry and their gaps have opposite signs have been investigated. The interface states have been shown to appear in these heterojunctions and they are spin-split. As a result if the Fermi level gets into one of the interface bands then it leads to magnetic ordering in the interface plane. That is the interface magnetization effect can be observed.
dc.description12 pages, Latex, uuencoded file with 2 Postscript figues included
dc.identifierhttps://arxiv.org/abs/cond-mat/9510157
dc.identifierhttp://arxiv.org/abs/cond-mat/9510157
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/97764
dc.subjectCondensed Matter
dc.titleInterface States in Stressed Semiconductor Heterojunction with Antiferromagnetic Ordering
dc.typetext

Files

Collections

arXiv