Nonlinear screening and ballistic transport in a graphene p-n junction

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dc.creatorZhang, L. M.
dc.creatorFogler, M. M.
dc.date2007-08-07
dc.date2007-08-11
dc.date.accessioned2026-07-07T09:27:34Z
dc.date.available2026-07-07T09:27:34Z
dc.descriptionWe study the charge density distribution, the electric field profile, and the resistance of an electrostatically created lateral p-n junction in graphene. We show that the electric field at the interface of the electron and hole regions is strongly enhanced due to limited screening capacity of Dirac quasiparticles. Accordingly, the junction resistance is lower than estimated in previous literature.
dc.description4 pages, 2 figures. (v1) Original version (v2) Introduction largely rewritten, minor typos fixed throughout
dc.identifierhttps://arxiv.org/abs/0708.0892
dc.identifierhttp://arxiv.org/abs/0708.0892
dc.identifierPhys. Rev. Lett. 100, 116804 (2008)
dc.identifierdoi:10.1103/PhysRevLett.100.116804
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/157148
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleNonlinear screening and ballistic transport in a graphene p-n junction
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