Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern

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dc.creatorBrammertz, G.
dc.creatorCaymax, M.
dc.creatorMols, Y.
dc.creatorDegroote, S.
dc.creatorLeys, M.
dc.creatorVan Steenbergen, J.
dc.creatorWinderickx, G.
dc.creatorBorghs, G.
dc.creatorMeuris, M.
dc.date2007-03-26
dc.date.accessioned2026-07-07T07:53:46Z
dc.date.available2026-07-07T07:53:46Z
dc.descriptionWe have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is fully selective, thanks to an optimized growth procedure, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by low pressure growth of GaAs. This growth procedure inhibits the nucleation of GaAs on the mask area and is a good compromise between reduction of loading effects and inhibition of anti phase domain growth in the GaAs. Nevertheless, both microscopic and macroscopic loading effects can still be observed on x-section SEM images and profilometer measurements. X-ray diffraction and low temperature photoluminescence measurements demonstrate the good microscopic characteristics of the selectively grown GaAs.
dc.description7 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0703664
dc.identifierhttp://arxiv.org/abs/cond-mat/0703664
dc.identifierProceedings of the 210th Meeting of The Electrochemical Society, Cancun, Mexico, October 29-November 3, 2006
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/126349
dc.subjectMaterials Science
dc.titleSelective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern
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