A possible route to grow a (Mn:Si(1-x)Gex)-based diluted magnetic semiconductor
| dc.creator | da Silva, Antonio J. R. | |
| dc.creator | Fazzio, A. | |
| dc.creator | Antonelli, A. | |
| dc.date | 2003-10-31 | |
| dc.date.accessioned | 2026-07-07T02:54:32Z | |
| dc.date.available | 2026-07-07T02:54:32Z | |
| dc.description | We systematically investigate, using ab initio density-functional theory calculations, the properties of interstitial and substitutional Mn in both Si and Ge, as well as in the Si(1-x)Gex alloy. We show that volume effects are not the main reason Mn prefers to be a subsitutional impurity in pure Ge, and chemical effects, therefore, play an important role. Using realistic models of Si(1-x)Gex, we show that for x approximately greater than 0.16 substitutional Mn in Ge-rich neighborhoods become more stable than interstitial Mn, which may allow the growth of Si-based diluted magnetic semiconductors. | |
| dc.description | 4 pages, 1 figure. Submitted for publication on October, 29th, 2003 | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0310770 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0310770 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/22584 | |
| dc.subject | Materials Science | |
| dc.title | A possible route to grow a (Mn:Si(1-x)Gex)-based diluted magnetic semiconductor | |
| dc.type | text |