Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs
| dc.creator | Bernevig, B. Andrei | |
| dc.creator | Zhang, Shou-Cheng | |
| dc.date | 2004-12-20 | |
| dc.date.accessioned | 2026-07-07T03:02:49Z | |
| dc.date.available | 2026-07-07T03:02:49Z | |
| dc.description | We show that the bulk Dresselhauss ($k^3$) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs has been recently observed experimentally by Kato {\emph{et. al.}} \cite{kato2004A}. We show that the experimental result is quantitatively consistent with the intrinsic spin-Hall effect due to the Dresselhauss term, when lifetime broadening is taken into account. On the other hand, extrinsic contribution to the spin-Hall effect is several orders of magnitude smaller than the observed effect. | |
| dc.description | 4 pages | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0412550 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0412550 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/25535 | |
| dc.subject | Materials Science | |
| dc.subject | Other Condensed Matter | |
| dc.title | Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs | |
| dc.type | text |