Optical probe of electrostatic doping in an n-type Mott insulator

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dc.creatorNakamura, M.
dc.creatorSawa, A.
dc.creatorSato, H.
dc.creatorAkoh, H.
dc.creatorKawasaki, M.
dc.creatorTokura, Y.
dc.date2007-02-15
dc.date.accessioned2026-07-07T07:55:26Z
dc.date.available2026-07-07T07:55:26Z
dc.descriptionElectrostatic doping into an $n$-type Mott insulator Sm$_{2}$CuO$_{4}$ has been successfully achieved with use of the heterojunction with an $n$-type band semiconductor Nb-doped SrTiO$_{3}$. The junction exhibits rectifying current-voltage characteristics due to the interface band discontinuity and the formation of depleted region. The application of reverse bias electric field on this junction enables the field-effect electron doping (presumably up to 6% per Cu atom) to the Mott insulator. The electro-modulation absorption spectroscopy could clearly show a large modification of the Mott-gap state accompanying the spectral weight transfer to the lower-energy region, reminiscent of formation of a metallic state.
dc.description4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0702351
dc.identifierhttp://arxiv.org/abs/cond-mat/0702351
dc.identifierPhys. Rev. B 75, 155103 (2007)
dc.identifierdoi:10.1103/PhysRevB.75.155103
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/126967
dc.subjectStrongly Correlated Electrons
dc.titleOptical probe of electrostatic doping in an n-type Mott insulator
dc.typetext

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