Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

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dc.creatorVelichko, O. I.
dc.creatorMironov, A. M.
dc.creatorTsurko, V. A.
dc.creatorZayats, G. M.
dc.date2005-09-30
dc.date2006-11-09
dc.date.accessioned2026-07-07T06:41:54Z
dc.date.available2026-07-07T06:41:54Z
dc.descriptionThe model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. Keywords: diffusion; clusters; ion implantation; arsenic; silicon PACS: 66.30.Jt
dc.description3 pages, 1 figure, 7 references Submitted to the Internatiolal conference "Interaction of Radiation with Solids IRS-2005", Minsk, Belarus, September 28-30, 2005
dc.identifierhttps://arxiv.org/abs/cond-mat/0509797
dc.identifierhttp://arxiv.org/abs/cond-mat/0509797
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/101842
dc.subjectMaterials Science
dc.titleSimulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation
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