Dephasing Time of Two-Dimensional Holes in GaAs Open Quantum Dots

Simple item page
dc.creatorFaniel, S.
dc.creatorHackens, B.
dc.creatorVlad, A.
dc.creatorMoldovan, L.
dc.creatorGustin, C.
dc.creatorHabib, B.
dc.creatorMelinte, S.
dc.creatorShayegan, M.
dc.creatorBayot, V.
dc.date2006-09-26
dc.date.accessioned2026-07-07T07:23:42Z
dc.date.available2026-07-07T07:23:42Z
dc.descriptionWe report magnetotransport measurements of two-dimensional holes in open quantum dots, patterned either as a single-dot or an array of dots, on a GaAs quantum well. For temperatures $T$ below 500 mK, we observe signatures of coherent transport, namely, conductance fluctuations and weak antilocalization. From these effects, the hole dephasing time $τ_ϕ$ is extracted using the random matrix theory. While $τ_ϕ$ shows a $T$-dependence that lies between $T^{-1}$ and $T^{-2}$, similar to that reported for electrons, its value is found to be approximately one order of magnitude smaller.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0609664
dc.identifierhttp://arxiv.org/abs/cond-mat/0609664
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/116082
dc.subjectMesoscale and Nanoscale Physics
dc.titleDephasing Time of Two-Dimensional Holes in GaAs Open Quantum Dots
dc.typetext

Files

Collections

arXiv