Origins of anomalous electronic structures of epitaxial graphene on silicon carbide

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dc.creatorKim, Seungchul
dc.creatorIhm, Jisoon
dc.creatorChoi, Hyoung Joon
dc.creatorSon, Young-Woo
dc.date2007-12-18
dc.date2008-04-29
dc.date.accessioned2026-07-07T09:35:25Z
dc.date.available2026-07-07T09:35:25Z
dc.descriptionOn the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap there. In the calculated atomic structures, a quasi-periodic $6\times 6$ domain pattern emerges out of a larger commensurate $6\sqrt{3}\times6\sqrt{3}R30^\circ$ periodic interfacial reconstruction, resolving a long standing experimental controversy on the periodicity of the interfacial superstructures. Our theoretical energy spectrum shows a gap and midgap states at the Dirac point of graphene, which are in excellent agreement with the recently-observed anomalous angle-resolved photoemission spectra. Beyond solving unexplained issues of epitaxial graphene, our atomistic study may provide a way to engineer the energy gaps of graphene on substrates.
dc.descriptionAdditional references added; published version; 4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0712.2897
dc.identifierhttp://arxiv.org/abs/0712.2897
dc.identifierPhys. Rev. Lett. 100, 176802 (2008)
dc.identifierdoi:10.1103/PhysRevLett.100.176802
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/159825
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleOrigins of anomalous electronic structures of epitaxial graphene on silicon carbide
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