Superlattice properties of semiconductor nanohelices in a transverse electric field
| dc.creator | Kibis, O. V. | |
| dc.creator | Portnoi, M. E. | |
| dc.date | 2008-09-23 | |
| dc.date.accessioned | 2026-07-07T10:04:40Z | |
| dc.date.available | 2026-07-07T10:04:40Z | |
| dc.description | A charge carrier confined in a quasi-one-dimensional semiconductor helical nanostructure in the presence of an electric field normal to the axis of the helix is subjected to a periodic potential proportional to the strength of the field and the helix radius. As a result, electronic properties of such nanohelices are similar to those of semiconductor superlattices with parameters controlled by the applied field. These properties include Bragg scattering of charge carriers by a periodic potential, which results in energy gap opening at the edge of the superlattice Brillouin zone. This provides an opportunity for creating a new class of tunable high-frequency devices based on semiconductor nanohelices. | |
| dc.description | 6 pages, 1 fugure | |
| dc.identifier | https://arxiv.org/abs/0809.3903 | |
| dc.identifier | http://arxiv.org/abs/0809.3903 | |
| dc.identifier | Physica E 40, 1899 (2008) | |
| dc.identifier | doi:10.1016/j.physe.2007.08.054 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/169758 | |
| dc.subject | Other Condensed Matter | |
| dc.title | Superlattice properties of semiconductor nanohelices in a transverse electric field | |
| dc.type | text |