Local Manipulation of Nuclear Spin in a Semiconductor Quantum Well

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dc.creatorPoggio, M.
dc.creatorSteeves, G. M.
dc.creatorMyers, R. C.
dc.creatorKato, Y.
dc.creatorGossard, A. C.
dc.creatorAwschalom, D. D.
dc.date2003-05-31
dc.date2003-06-03
dc.date.accessioned2026-07-07T02:51:37Z
dc.date.available2026-07-07T02:51:37Z
dc.descriptionThe shaping of nuclear spin polarization profiles and the induction of nuclear resonances are demonstrated within a parabolic quantum well using an externally applied gate voltage. Voltage control of the electron and hole wave functions results in nanometer-scale sheets of polarized nuclei positioned along the growth direction of the well. RF voltages across the gates induce resonant spin transitions of selected isotopes. This depolarizing effect depends strongly on the separation of electrons and holes, suggesting that a highly localized mechanism accounts for the observed behavior.
dc.description18 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0306012
dc.identifierhttp://arxiv.org/abs/cond-mat/0306012
dc.identifierPhys. Rev. Lett. 91, 207602 (2003)
dc.identifierdoi:10.1103/PhysRevLett.91.207602
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21529
dc.subjectMesoscale and Nanoscale Physics
dc.titleLocal Manipulation of Nuclear Spin in a Semiconductor Quantum Well
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