The mechanism of ion induced amorphization in Si

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dc.creatorLenka, H. P.
dc.creatorBhatta, U. M.
dc.creatorKuiri, P. K.
dc.creatorSahu, G.
dc.creatorJoseph, B.
dc.creatorSatpati, B.
dc.creatorMahapatra, D. P.
dc.date2008-11-05
dc.date2009-02-16
dc.date.accessioned2026-07-07T12:41:50Z
dc.date.available2026-07-07T12:41:50Z
dc.descriptionSome results on damage build up in, and amorphization of, Si, induced by 25-30 keV Al$_5^-$, Si$_5^-$ and Cs$^-$ ions, at room temperature, are reported. We show that at low energy, amorphization is a nucleation and growth process, based on the direct impact mechanism. With an Avrami exponent $\sim 1.6$, the growth towards amorphization seems to be diffusion limited. A transition to a completely amorphized state is indicated at a dose exceeding 17 eV/atom, which is higher than 6-12 eV/atom as predicted by simulations. The observed higher threshold could be due to temperature effects although an underestimation of keV-energy recoils, in simulation, may not be ruled out.
dc.description4 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0811.0806
dc.identifierhttp://arxiv.org/abs/0811.0806
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/219874
dc.subjectMaterials Science
dc.titleThe mechanism of ion induced amorphization in Si
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