Excitonic effects on the two-color coherent control of interband transitions in bulk semiconductors

dc.creatorBhat, R. D. R.
dc.creatorSipe, J. E.
dc.date2005-06-15
dc.date.accessioned2026-07-07T03:05:38Z
dc.date.available2026-07-07T03:05:38Z
dc.descriptionQuantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current injection may all be controlled. We extend the theory of these processes to include the electron-hole interaction. Our focus is on photon energies that excite carriers above the band edge, but close enough to it so that transition amplitudes based on low order expansions in $\mathbf{k}$ are applicable; both allowed-allowed and allowed-forbidden two-photon transition amplitudes are included. Analytic solutions are obtained using the effective mass theory of Wannier excitons; degenerate bands are accounted for, but envelope-hole coupling is neglected. We find a Coulomb enhancement of two-color coherent control process, and relate it to the Coulomb enhancements of one- and two-photon absorption. In addition, we find a frequency dependent phase shift in the dependence of photocurrent and spin current on the optical phases. The phase shift decreases monotonically from $π/2$ at the band edge to 0 over an energy range governed by the exciton binding energy. It is the difference between the partial wave phase shifts of the electron-hole envelope function reached by one- and two-photon pathways.
dc.description31 pages, 4 figures, to be published in Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/0506376
dc.identifierhttp://arxiv.org/abs/cond-mat/0506376
dc.identifierPhys. Rev. B 72, 075205 (2005) (14 pages)
dc.identifierdoi:10.1103/PhysRevB.72.075205
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26521
dc.subjectOther Condensed Matter
dc.titleExcitonic effects on the two-color coherent control of interband transitions in bulk semiconductors
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