Hot-electron noise suppression in n-Si via the Hall effect

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dc.creatorCiccarello, F.
dc.creatorZammito, S.
dc.creatorZarcone, M.
dc.date2008-06-30
dc.date.accessioned2026-07-07T12:28:39Z
dc.date.available2026-07-07T12:28:39Z
dc.descriptionWe investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.
dc.identifierhttps://arxiv.org/abs/0806.4955
dc.identifierhttp://arxiv.org/abs/0806.4955
dc.identifierJ. Stat. Mech. P1042 (2009)
dc.identifierdoi:10.1088/1742-5468/2009/01/P01042
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/215611
dc.subjectMaterials Science
dc.subjectQuantum Physics
dc.titleHot-electron noise suppression in n-Si via the Hall effect
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