Photoconductive gain in semiconductor quantum wires

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dc.creatorHof, K. -D.
dc.creatorRossler, C.
dc.creatorManus, S.
dc.creatorKotthaus, J. P.
dc.creatorHolleitner, A. W.
dc.creatorSchuh, D.
dc.creatorWegscheider, W.
dc.date2008-10-06
dc.date.accessioned2026-07-07T10:07:50Z
dc.date.available2026-07-07T10:07:50Z
dc.descriptionWe report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the one-dimensional subbands of the quantum wire. Here we demonstrate that the effect persists up to a temperature of about 17 Kelvin.
dc.identifierhttps://arxiv.org/abs/0810.0970
dc.identifierhttp://arxiv.org/abs/0810.0970
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/170785
dc.subjectMesoscale and Nanoscale Physics
dc.titlePhotoconductive gain in semiconductor quantum wires
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