Magnetic tunnel junctions with impurities

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dc.creatorKanjouri, F.
dc.creatorRyzhanova, N.
dc.creatorDieny, B.
dc.creatorStrelkov, N.
dc.creatorVedyayev, A.
dc.date2004-11-11
dc.date2004-11-17
dc.date.accessioned2026-07-07T03:02:03Z
dc.date.available2026-07-07T03:02:03Z
dc.descriptionThe influence of impurities, embedded into the isolating spacer (I) between two ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance (TMR), is theoretically investigated. It is shown, that the current and TMR are strongly enhanced in the vicinity of the impurity under the condition that the energy of the electron's bound state on the impurity is close to the Fermi energy. If the position of the impurity inside the barrier is asymmetric, e.g. closer to the one of the interfaces F/I the I-V curve exhibits quasidiode behavior.
dc.description7pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0411309
dc.identifierhttp://arxiv.org/abs/cond-mat/0411309
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25263
dc.subjectOther Condensed Matter
dc.titleMagnetic tunnel junctions with impurities
dc.typetext

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