Spin-Voltaic Effect and its Implications
| dc.creator | Zutic, Igor | |
| dc.creator | Fabian, Jaroslav | |
| dc.date | 2003-04-22 | |
| dc.date.accessioned | 2026-07-07T02:50:53Z | |
| dc.date.available | 2026-07-07T02:50:53Z | |
| dc.description | In an inhomogeneously doped magnetic semiconductor, an interplay between an equilibrium magnetization and injected nonequilibrium spin leads to the spin-voltaic effect--a spin analogue of the photo-voltaic effect. By reversing either the sign of the equilibrium magnetization or the direction of injected spin polarization it is possible to switch the direction of charge current in a closed circuit or, alternatively, to switch the sign of the induced open-circuit voltage. Properties of the spin-voltaic effect can be used to perform all-electrical measurements of spin relaxation time and injected spin polarization, as well as to design devices with large magnetoresistance and spin-controlled amplification. | |
| dc.description | 4 pages, 2 figures; submitted to Materials Transactions, special issue on Nano-Hetero Structures in Advanced Metallic Materials | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0304472 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0304472 | |
| dc.identifier | Mater. Trans., JIM 44, 2062 (2003) | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/21265 | |
| dc.subject | Condensed Matter | |
| dc.title | Spin-Voltaic Effect and its Implications | |
| dc.type | text |