Evidence for a Structurally-driven Insulator-to-metal Transition in VO2: a View from the Ultrafast Timescale

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dc.creatorCavalleri, A.
dc.creatorDekorsy, Th.
dc.creatorChong, H. H.
dc.creatorKieffer, J. C.
dc.creatorSchoenlein, R. W.
dc.date2004-03-08
dc.date.accessioned2026-07-07T02:56:50Z
dc.date.available2026-07-07T02:56:50Z
dc.descriptionWe apply ultrafast spectroscopy to establish a time-domain hierarchy between structural and electronic effects in a strongly-correlated electron system. We discuss the case of the model system VO2, a prototypical non-magnetic compound that exhibits cell doubling, charge localization and a metal-insulator transition below 340 K. We initiate the formation of the metallic phase by prompt hole photo-doping into the valence band of the low-T insulator. The I-M transition is however delayed with respect to hole injection, exhibiting a bottleneck timescale that corresponds to half period of the phonon connecting the two crystallographic phases. This experiment indicates that this controversial insulator may have important band-like character.
dc.description17 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0403214
dc.identifierhttp://arxiv.org/abs/cond-mat/0403214
dc.identifierPhysical Review B 70, 161102(R) (2004)
dc.identifierdoi:10.1103/PhysRevB.70.161102
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23484
dc.subjectStrongly Correlated Electrons
dc.titleEvidence for a Structurally-driven Insulator-to-metal Transition in VO2: a View from the Ultrafast Timescale
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