Quantum Diffusion and Localization in Disordered Electronic Systems

dc.creatorWells Jr., P. R.
dc.creatorCastro, J. d'Albuquerque e
dc.creatorde Queiroz, S. L. A.
dc.date2008-01-03
dc.date2008-07-07
dc.date.accessioned2026-07-07T09:48:24Z
dc.date.available2026-07-07T09:48:24Z
dc.descriptionThe diffusion of electronic wave packets in one-dimensional systems with on-site, binary disorder is numerically investigated within the framework of a single-band tight-binding model. Fractal properties are incorporated by assuming that the distribution of distances $\ell$ between consecutive impurities obeys a power law, $P(\ell) \sim \ell^{-α}$. For suitable ranges of $α$, one finds system-wide anomalous diffusion. Asymmetric diffusion effects are introduced through the application of an external electric field, leading to results similar to those observed in the case of photogenerated electron-hole plasmas in tilted InP/InGaAs/InP quantum wells.
dc.descriptionRevTex4, 6 pages, 6 .eps figures: published version
dc.identifierhttps://arxiv.org/abs/0801.0513
dc.identifierhttp://arxiv.org/abs/0801.0513
dc.identifierPhys. Rev. B 78, 035102 (2008)
dc.identifierdoi:10.1103/PhysRevB.78.035102
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/164202
dc.subjectDisordered Systems and Neural Networks
dc.titleQuantum Diffusion and Localization in Disordered Electronic Systems
dc.typetext

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