Weak antilocalization in epitaxial graphene: evidence for chiral electrons

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dc.creatorWu, Xiaosong
dc.creatorLi, Xuebin
dc.creatorSong, Zhimin
dc.creatorBerger, Claire
dc.creatorde Heer, Walt A.
dc.date2006-11-13
dc.date2007-03-28
dc.date.accessioned2026-07-07T07:54:42Z
dc.date.available2026-07-07T07:54:42Z
dc.descriptionTransport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak anti-localization in 2D samples manifests itself as a broad cusp-like depression in the longitudinal resistance for magnetic fields 10 mT$< B <$ 5 T. An extremely sharp weak-localization resistance peak at B=0 is also observed. These features quantitatively agree with graphene weak-(anti)localization theory implying the chiral electronic character of the samples. Scattering contributions from the trapped charges in the substrate and from trigonal warping due to the graphite layer on top are tentatively identified. The Shubnikov-de Haas oscillations are remarkably small and show an anomalous Berry's phase.
dc.description5 pages, 4 figures. Minor changes
dc.identifierhttps://arxiv.org/abs/cond-mat/0611339
dc.identifierhttp://arxiv.org/abs/cond-mat/0611339
dc.identifierPhys. Rev. Lett. 98, 136801 (2007)
dc.identifierdoi:10.1103/PhysRevLett.98.136801
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/126713
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleWeak antilocalization in epitaxial graphene: evidence for chiral electrons
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